Indium oxide nanomesh-based electrolyte-gated synaptic transistors
نویسندگان
چکیده
Based on the movement and accumulation of ions in 1-ethyl-3-methylimidazolium dicyanamide ([EMIM]DCA) electrolyte under a positive gate bias, electrical double layer (EDL) was formed between nanomesh channel [EMIM]DCA to contribute increase conductance channel. The basic functions artificial synapses, such as excitatory postsynaptic current (EPSC), paired pulse facilitation (PPF), short-term plasticity (STP), long-term (LTP), are realized successfully. Besides, high-pass filter function implemented, which shows application potential device signal processing.
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ژورنال
عنوان ژورنال: Journal of information display
سال: 2021
ISSN: ['2158-1606', '1598-0316']
DOI: https://doi.org/10.1080/15980316.2021.1911866